FGA25N120 – ORG

Product Category: IGBT Transistors
Technology: Si
Package/Case: TO-3PN
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2 V
Maximum Gate Emitter Voltage: – 20 V, 20 V
Continuous Collector Current at 25 C: 50 A
Pd – Power Dissipation: 312 W
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C